Power LDMOS transistor

20 W plastic LDMOS power transistor for general purpose applications at frequencies from 400 MHz to 2700 MHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for broadband operation
  • Excellent thermal stability
  • High power gain
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Radars & avionics
  • Broadcast transmitter applications
  • Communications
  • Industrial, scientific and medical applications

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLP0427M9S20

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 2700 MHz
PL(1dB) nominal output power at 1 dB gain compression 20 W
Test signal: Pulsed RF
VDS drain-source voltage 1200 to 1400 MHz [0] 28 V
Gp power gain 1200 to 1400 MHz [0] 19 dB
ηD drain efficiency 1200 to 1400 MHz [0] 63 %
PL(1dB) output power at 1 dB gain compression 1200 to 1400 MHz [0] 43 dBm
RLin input return loss 1200 to 1400 MHz [0] -9 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP0427M9S20 TO-270
(TO-270-2F-1)
to270_2f-1 TR13; 500-fold; 24 mm; dry pack Active Standard Marking BLP0427M9S20Z
(9349 601 09515)
TR7; 100-fold; 24 mm; dry pack Active Standard Marking BLP0427M9S20XY
(9349 601 09538)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source [1]