Ampleon presents its newest 2500 W peak RF power transistors, powered by a 75 V supply. This marks a notable leap forward in the Advanced Rugged Transistors (ART) technology, setting a new standard for robustness and performance.
Ampleon will showcase at the European Microwave Week 2022 our latest solutions and innovative products in GaN and LDMOS technologies. Among the products on display will be ones aimed at wireless infrastructure, avionics/defence, non-cellular communication, cooking/ defrosting, and ISM-related applications. A key highlight for visitors will be the brand new CLL3H0914L-700 GaN-SiC HEMT.
Ampleon is participating in the IEEE International Microwave Symposium (IMS), held in Denver, CO, USA and is introducing several new gallium nitride (GaN) and LDMOS solutions intended for use in wireless infrastructure, aerospace and defense, NCC (non-cellular communication), ISM (industrial, scientific and medical), cooking and defrosting applications.
Ampleon, utilizing advanced LDMOS transistor technology, introduces the B11G3338N80D push-pull 3-stage fully integrated Doherty RF transistor being the carrier product for GEN11 Macro driver family covering all sub-6GHz frequency bands. This highly efficient multiband device covers a frequency range from 3.3 to 3.8GHz, enabling the implementation of next-generation high power and market-leading efficiency macro base stations.
Ampleon presents its newest 2500 W peak RF power transistors, powered by a 75 V supply. This marks a notable leap forward in the Advanced Rugged Transistors (ART) technology, setting a new standard for robustness and performance.
Ampleon will showcase at the European Microwave Week 2022 our latest solutions and innovative products in GaN and LDMOS technologies. Among the products on display will be ones aimed at wireless infrastructure, avionics/defence, non-cellular communication, cooking/ defrosting, and ISM-related applications. A key highlight for visitors will be the brand new CLL3H0914L-700 GaN-SiC HEMT.
Ampleon is participating in the IEEE International Microwave Symposium (IMS), held in Denver, CO, USA and is introducing several new gallium nitride (GaN) and LDMOS solutions intended for use in wireless infrastructure, aerospace and defense, NCC (non-cellular communication), ISM (industrial, scientific and medical), cooking and defrosting applications.
Ampleon, utilizing advanced LDMOS transistor technology, introduces the B11G3338N80D push-pull 3-stage fully integrated Doherty RF transistor being the carrier product for GEN11 Macro driver family covering all sub-6GHz frequency bands. This highly efficient multiband device covers a frequency range from 3.3 to 3.8GHz, enabling the implementation of next-generation high power and market-leading efficiency macro base stations.