Events

International Microwave Symposium (IMS) 2025

June 15–20, 2025 | San Francisco | USA

We look forward to participating in International Microwave Symposium (IMS) 2025, the world’s leading microwave event, taking place in San Francisco from June 15 to 20. Visit us on the exhibition floor at Booth #1372, where we will present our latest innovations in RF solutions. Our experts will be available to discuss how we are advancing society through RF technology.

Conference

TECHNICAL SESSION Tu2D-3 | Tuesday, 17 June 2025 | 10:50 

System-in-Package Doherty Power Amplifier Using Hybrid LDMOS/ GaN Line-Up for 5G Macro Driver Applications by Stephan Maroldt et al.

TECHNICAL SESSION | Tu2E-2 | Tuesday, 17 June 2025 | 10:30 

DeltaDPD: Exploiting Dynamic Temporal Sparsity in Recurrent Neural Networks for Energy-Efficient Wideband Digital Predistortion by R. Gajadharsing et al.

Extremely rugged switched-mode PAs with 85 % efficiency in 25 x 50 mm²

ART150PE(G)

  • Full CW design for ISM applications
  • Very high efficiency over voltage range from 25 to 60 V
  • Small footprint of 25 x 50 mm
  • Cost efficient application in TO270 package
Industry’s most rugged 2k W SSPA for Industrial, Scientific and Medical

ART2K0FE(S)(G) and ART2K0PE(G)

  • Operating voltage up to 65 V with 208 V breakdown voltage
  • Design to withstand a minimum VSWR of 65:1 at 65 V
  • Ideal RF Source for plasma generators, CO2 laser drivers, MRI, fusion energy, particle accelerators, short wave radars, FM and VHF broadcast etc.
Gen9HV for high performance and reliable UHF broadcast solutions

BLF989E

  • Best UHF RF performance at 180 W average power
  • Excellent load mismatch capability of VSWR 40:1
  • Covers UHF broadcast as well as 5G broadcast applications
  • Optimized gain flatness over the band
  • Standard ceramic SOT539 package
Optimized on efficiency ultra-compact design at 60 MHz

ART4K0FX

  • Full CW application for 60 MHz
  • Optimized design for max efficiency 2000 W @ 65 V
  • Changing BOM of application the same PCB design can tuned for max. CW power or tuned to max. eff.
  • Lowest volume 152 x 60 x 30 mm due to unique patented multilayer coplanar balun
2.4 GHz CW GaN line-up SSPA with > 350 W and highest efficiency

CLP24H4S30P + CLF24H4LS300P

  • GaN-on-SiC transistor operating at 50 V
  • 70 % efficiency over the band from 2400 to 2500 MHz
  • Designed for full continuous wave applications
  • Demo board includes a directional coupler monitoring output power, surface mounted circulator and external temperature sensor
100 Watt broadband GaN-on-SiC HEMTs with excellent linearity

CLF3H0035(S)-100

  • Excellent linearity
  • Low output capacitance for wideband applications
  • Eared and earless ceramic packages
450–800 W extremely rugged SSPAs for Industrial, Scientific and Medical

ART450FE; ART700FH and ART800PE

  • Based on both ART 50 V or ART 65 V technologies
  • Design to withstand a minimum VSWR of 65:1
  • Suitable RF source for CO2 laser drivers, plasma generators, MRI, particle accelerators, industrial heating, broadcast etc.