From June 1–6, 2025, the global accelerator community will gather in Taipei for the 16th edition of the International Particle Accelerator Conference (IPAC). Ampleon will showcase at booth #S09. This annual event, jointly organized by accelerator communities across Asia, Europe, and the United States, brings together top researchers, scientists, and industry leaders to share the latest advancements in particle accelerator technologies.
IPAC'25 serves as a vital platform for showcasing cutting-edge research and development in the field. World-renowned research institutions such as CERN, DESY, Argonne and J-PARC will be present, alongside leading system manufacturers and RF module makers including Trumpf, Cryoelectra, Thales, SYES, and R&K - many of whom are valued Ampleon customers.
Ampleon is proud to participate in IPAC'25, reinforcing its commitment to supporting the accelerator industry's evolution. As the market transitions from traditional tube-based systems to advanced solid-state power amplifier (SSPA) solutions, Ampleon's high-performance RF transistors - built on LDMOS and GaN technologies - play a crucial role in enabling next-generation particle accelerators.
This transformation highlights Ampleon’s strategic role in delivering efficient, rugged, and reliable solid-state RF solutions tailored for scientific and medical accelerator applications. We help power the future of particle acceleration.
ART2K5TFUS/G and ART2K5TPU
- Operating voltage up to 75 V
- On chip thermal sensor
- Design to withstand a minimum VSWR of 65:1 at 75 V
- Key RF source for MRI, fusion energy, particle accelerators applications
CLF06H4LS1K5P
- GaN-on-SiC transistor operating at 50 V
- Designed for full CW ISM applications
- High efficiency 80 % efficiency at 600 MHz
- Available in ceramic SOT539, earless
CLF09H4LS1K4P
- GaN-on-SiC transistor operating at 50 V
- Designed for full continuous wave ISM applications
- 78 % efficiency at 915 MHz
- Available in ceramic SOT539 earless
CLF13H4LS800P
- GaN-on-SiC transistor operating at 50 V
- Designed for full CW particle accelerator applications
- 74 % efficiency at 1300 MHz
- Available in ceramic SOT539 earless
CLS3H2731L(S)-700
- GaN-on-SiC HEMT operating at 50 V
- Solid State PA for low maintenance and long-life cycle
- Highest efficiency in combination with low Rth ensuring low SWaP
- Available in SOT502, eared and earless
BLF978P
- Suitable for pulsed and CW operation
- Best-in-class efficiency up to 700 MHz
- High power gain with optimal gain flatness
- Low thermal resistances