Nijmegen, The Netherlands, August 19, 2025 – Ampleon introduces four 700 W GaN-on-SiC RF transistors designed for S-band radar systems, operating between 2.7 and 3.5 GHz. Developed for use in aerospace, defense, weather, scientific and industrial applications, the new devices combine high efficiency, power density, and ruggedness, enabled by GaN-on-SiC HEMT technology.
The transistors are available in two frequency-specific variants: 2.7–3.1 GHz and 3.1–3.5 GHz, each offered in flanged (SOT502A) and leadless ceramic (SOT502B) package options to support different integration requirements. The complete line-up includes:
- CLS3H2731L-700 (SOT502A, 2.7–3.1 GHz)
- CLS3H2731LS-700 (SOT502B, 2.7–3.1 GHz)
- CLS3H3135L-700 (SOT502A, 3.1–3.5 GHz)
- CLS3H3135LS-700 (SOT502B, 3.1–3.5 GHz)
Designed specifically for modern radar transmitters, these transistors support pulse lengths of up to 300 microseconds and duty cycles between 10 and 20 percent. This makes them well suited for advanced radar waveforms across a range of mission-critical applications, including air traffic control, ground and naval defense, weather monitoring, surveillance systems, and particle acceleration. To simplify amplifier design and shorten development time, the transistors feature internal input matching and high input impedance. Their low thermal resistance supports reliable performance under high-duty-cycle conditions, while the two package formats provide flexibility for meeting diverse mechanical and thermal design requirements.
The CLS3H2731 and CLS3H3135 families are built on Ampleon’s radar-optimized GaN-on-SiC platform, combining frequency-specific design, long-pulse support, and robust thermal performance. These capabilities are typically not found in standard GaN transistors. For radar system designers, this unique combination translates into a reliable, high-power solution tailored to next-generation S-band radar needs.
The transistors are now in mass production and available through Ampleon’s global distribution partners. For pricing and ordering information, please contact your local Ampleon sales representative or preferred distributor.
For more information, visit:
www.ampleon.com/pip/CLS3H2731L-700
www.ampleon.com/pip/CLS3H2731LS-700
www.ampleon.com/pip/CLS3H3135L-700
www.ampleon.com/pip/CLS3H3135LS-700
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For further information and reader inquiries:
Susanne Schorn, Corporate Communications,
Ampleon Netherlands B.V.,
Halfgeleiderweg 8, 6534 AV Nijmegen, The Netherlands,
Tel: +31 6 83 63 10 59,
Email: susanne.schorn@ampleon.com,
www.ampleon.com
About Ampleon:
Created in 2015 and headquartered in the Netherlands, Ampleon is shaped by nearly 60 years of RF power leadership. The company envisions to advance society through innovative RF solutions based on GaN and LDMOS technologies. Ampleon is dedicated to being the partner of choice by delivering high-quality, high-performance RF products with its world-class talent. The portfolio offers flexibility in scaling design and production for any volume and addresses applications for 4G LTE, 5G NR infrastructure, industrial, scientific, medical, broadcast, navigation and safety radio. Proven reliability, secure supply and excellent product consistency enable highest manufacturing yields for customers who benefit from Ampleon being a one-stop-partner for RF power solutions. For more details, please visit www.ampleon.com.